Wei Yan
City:
Shanghai
Country:
China
Current Affiliation:
Fudan University
Current Position:
Ph.D. Candidate
Field of Research:
ENGINEERING - Electrical and Electronic Engineering - Microelectronics and Integrated Circuits
Research Interests:
Low-power analog integrated circuit designs; High performance DC-DC converter designs.
Publication History:
[1] Wei Yan, Wenhong Li, and Ran Liu, “Nanopower CMOS sub-bandgap reference with 11 ppm/oC temperature coefficient,” IET Electronics Letters, vol. 45, no. 12, Jun. 2009.
[2] Wei Yan, Changming Pi, Wenhong Li, and Ran Liu, “Dynamic dead-time controller for synchronous buck DC-DC converters,” IET Electronics Letters, vol. 46, no. 2, Dec. 2009.
[3] Wei Yan, Wenhong Li, and Ran Liu, “A Noise-Shaped Buck DC–DC Converter Based on a 3rd-Order Continuous-Time Active-Passive Sigma-Delta Modulator,” to appear in Proc. 12th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2010), CO, USA, Jun. 2010.
[2] Wei Yan, Changming Pi, Wenhong Li, and Ran Liu, “Dynamic dead-time controller for synchronous buck DC-DC converters,” IET Electronics Letters, vol. 46, no. 2, Dec. 2009.
[3] Wei Yan, Wenhong Li, and Ran Liu, “A Noise-Shaped Buck DC–DC Converter Based on a 3rd-Order Continuous-Time Active-Passive Sigma-Delta Modulator,” to appear in Proc. 12th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2010), CO, USA, Jun. 2010.
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